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BUK761R8-30C
N-channel TrenchMOS standard level FET
Rev. 02 -- 20 August 2007 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology.
1.2 Features
175 C rated Standard level compatible Q101 compliant TrenchMOS technology
1.3 Applications
12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids
1.4 Quick reference data
Table 1. ID Ptot RDSon Quick reference Conditions VGS = 10 V; Tmb = 25 C; see Figure 1 and 4 Tmb = 25 C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 12 and 13
[1][2]
Symbol Parameter drain current total power dissipation drain-source on-state resistance
Min -
Typ 1.5
Max 100 333 1.8
Unit A W m
Static characteristics
Avalanche ruggedness ID = 100 A; Vsup 30 V; EDS(AL)S non-repetitive drain-source avalanche RGS = 50 ; VGS = 10 V; Tj(init) = 25 C energy
[1] [2] Refer to document 9397 750 12572 for further information. Continuous current is limited by package.
-
-
1.7
J
NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning Symbol G D S D Description gate drain source mounting base; connected to drain
1
G
mbb076
Simplified outline
mb
Graphic Symbol
D
S
2 3
SOT404 (D2PAK)
3. Ordering information
Table 3. Ordering information Package Name BUK761R8-30C D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead SOT404 cropped) Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 100 C; VGS = 10 V; see Figure 1 and 4 Tmb = 25 C; VGS = 10 V; see Figure 1 and 4 Tmb = 25 C; VGS = 10 V; see Figure 1 and 4 IDM Ptot Tstg Tj peak drain current total power dissipation storage temperature junction temperature ID = 100 A; Vsup 30 V; RGS = 50 ; VGS = 10 V; Tj(init) = 25 C see Figure 3
[4][5] [6][7] [1][2] [1][2] [1][3]
Conditions RGS = 20 k
Min -20 -55 -55 -
Max 30 30 20 100 100 312 1249 333 175 175 1.7
Unit V V V A A A A W C C J
Tmb = 25 C; tp 10 s; pulsed; see Figure 4 Tmb = 25 C; see Figure 2
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy Source-drain diode IS ISM
BUK761R8-30C_2
-
-
J
source current peak source current
Tmb = 25 C Tmb = 25 C tp 10 s; pulsed; Tmb = 25 C
Rev. 02 -- 20 August 2007
[1][3] [1][2]
-
312 100 1249
A A A
2 of 15
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
[1] [2] [3] [4] [5] [6] [7]
Refer to document 9397 750 12572 for further information. Continuous current is limited by package. Current is limited by chip power dissipation rating. Maximum value not quoted. Repetitive rating defined in avalanche rating figure. Single-pulse avalanche rating limited by maximum junction temperature of 175 C. Repetitive avalanche rating limited by an average junction temperature of 170 C. Refer to application note AN10273 for further information.
300 ID (A) 200
003aab338
120 Pder (%) 80
03aa16
100
(1)
40
0 0 50 100 150 Tmb (C) 200
0 0 50 100 150 Tmb (C) 200
VGS
10 V
P der =
P tot P tot (25C )
x 100 %
(1) Capped at 100 A due to package.
Fig 1. Continuous drain current as a function of mounting base temperature
Fig 2. Normalized total power dissipation as a function of mounting base temperature
BUK761R8-30C_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2007
3 of 15
NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
103 IAL (A) 102
003aab373
(1)
(2)
10
(3)
1 10-3
10-2
10-1
1
tAL (ms)
10
(1) Single pulse; Tmb = 25 C. (2) Single pulse; Tmb = 150 C. (3) Repetitive.
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
104 ID (A) 103
003aab339
Limit RDSon = VDS / ID tp = 10 s 100 s
102
(1)
DC 10
1 ms
10 ms 100 ms 1 10-1 1 10
VDS (V)
102
Tmb = 25 C; IDM is single pulse (1) Capped at 100 A due to package.
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK761R8-30C_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2007
4 of 15
NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to mounting base Conditions mounted on printed circuit board; minimum footprint see Figure 5 Min Typ 50 Max Unit K/W
Rth(j-mb)
-
-
0.45
K/W
1 Zth(j-mb) (K/W) 10-1
0.1 0.05 0.02
003aab340
= 0.5
0.2
10-2
P
=
tp T
single shot
tp T
t
10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6. Symbol V(BR)DSS Characteristics Parameter drain-source breakdown voltage Conditions ID = 250 A; VGS = 0 V; Tj = 25 C ID = 250 A; VGS = 0 V; Tj = -55 C VGSth gate-source threshold ID = 1 mA; VDS = VGS; voltage Tj = -55 C; see Figure 10 ID = 1 mA; VDS = VGS; Tj = 175 C; see Figure 11 and 10 ID = 1 mA; VDS = VGS; Tj = 25 C; see Figure 11 and 10 Min 30 27 1 Typ Max 4.4 Unit V V V V
Static characteristics
2
3
4
V
BUK761R8-30C_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2007
5 of 15
NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
Table 6. Symbol IDSS
Characteristics ...continued Parameter drain leakage current Conditions VDS = 30 V; VGS = 0 V; Tj = 25 C VDS = 30 V; VGS = 0 V; Tj = 175 C Min Typ 0.02 2 2 Max 1 500 100 100 3.4 Unit A A nA nA m
IGSS
gate leakage current
VDS = 0 V; VGS = 20 V; Tj = 25 C VDS = 0 V; VGS = -20 V; Tj = 25 C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj = 175 C; see Figure 12 and 13 VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 12 and 13
-
1.5
1.8
m
Source-drain diode VSD trr Qr source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 C; see Figure 16 0.85 73 48 1.2 V ns nC
reverse recovery time IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 25 V recovered charge IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 25 V ID = 25 A; VDS = 24 V; VGS = 10 V; see Figure 14 ID = 25 A; VDS = 24 V; VGS = 10 V; see Figure 14 ID = 25 A; VDS = 24 V; VGS = 10 V; see Figure 14 ID = 25 A; VDS = 24 V; see Figure 14 VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 C; see Figure 15 VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 C; see Figure 15 VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 C; see Figure 15 VDS = 25 V; RL = 1.2 ; VGS = 10 V; RG(ext) = 10 VDS = 25 V; RL = 1.2 ; VGS = 10 V; RG(ext) = 10 VDS = 25 V; RL = 1.2 ; VGS = 10 V; RG(ext) = 10
Dynamic characteristics QG(tot) QGS QGD VGS(pl) Ciss total gate charge gate-source charge gate-drain charge gate-source plateau voltage input capacitance 150 36 52 5 7762 10349 nC nC nC V pF
Coss
output capacitance
-
1807
2168
pF
Crss
reverse transfer capacitance turn-on delay time rise time turn-off delay time
-
996
1365
pF
td(on) tr td(off)
-
52 110 186
-
ns ns ns
BUK761R8-30C_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2007
6 of 15
NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
Table 6. Symbol tf LD LS
Characteristics ...continued Parameter fall time internal drain inductance internal source inductance Conditions VDS = 25 V; RL = 1.2 ; VGS = 10 V; RG(ext) = 10 from upper edge of drain mounting base to center of die from source lead to source bonding pad Min Typ 134 2.5 7.5 Max Unit ns nH nH
300 ID (A) 20 7 6 200
003aab341
8 RDSon (m) VGS (V) = 5 5.5
003aab361
5.5
6
4 VGS (V) = 5 100 2 4.5 4 0 0 2 4 6 8 10 VDS (V) 0 0 100 200 ID (A) 300 15 20 7
T j = 25 C
T j = 25 C
Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function of drain current; typical values
BUK761R8-30C_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2007
7 of 15
NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
180 gfs (S) 120
003aab344
300 ID (A) 200
003aab346
60
100 Tj = 175 C Tj = 25 C
0 0 20 40 60 ID (A) 80
0 0 2 4 6 V (V) 8 GS
T j = 25 C; VDS = 25 V
VDS = 25 V
Fig 8. Forward transconductance as a function of drain current; typical values
10-1 ID (A) 10-2 min typ max
03aa35
Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values
5 VGS(th) (V) 4 max
03aa32
10-3
3
typ
10-4
2
min
10-5
1
10-6 0 2 4 VGS (V) 6
0 -60
0
60
120 Tj (C)
180
T j = 25 C; VDS = VGS
ID = 1 m A; VDS = VGS
Fig 10. Sub-threshold drain current as a function of gate-source voltage
Fig 11. Gate-source threshold voltage as a function of junction temperature
BUK761R8-30C_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2007
8 of 15
NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
4 RDSon (m) 3
003aab360
2 a 1.5
03aa27
1
2
0.5
1 0 5 10 15 VGS (V) 20
0 -60
0
60
120
Tj (C)
180
T j = 25 C; ID = 25 A
a=
R DSon R DSon (25C )
Fig 12. Drain-source on-state resistance as a function of gate-source voltage; typical values
10 VGS (V) 8 VDS = 14 V
003aab347
Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature
12000 C (pF) 8000
003aab345
Ciss
6
VDS = 24 V Coss
4 4000 2 Crss 0 0 50 100 QG (nC) 150 0 10-1
1
10
VDS (V)
102
T j = 25 C; ID = 25 A
VGS = 0 V ; f = 1 M H z
Fig 14. Gate-source voltage as a function of gate charge; typical values
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
BUK761R8-30C_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2007
9 of 15
NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
200 IS (A) 150
003aab348
100 Tj = 175 C Tj = 25 C 50
0 0 0.5 1 1.5 VSD (V) 2
VGS = 0 V
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK761R8-30C_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2007
10 of 15
NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A E A1 mounting base
D1
D
HD
2
Lp
1
3
b c Q
e
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 2.54 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20
OUTLINE VERSION SOT404
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 05-02-11 06-03-16
Fig 17. Package outline SOT404 (D2PAK)
BUK761R8-30C_2 (c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2007
11 of 15
NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
8. Soldering
10.85 10.60 10.50 1.50 7.50 7.40 1.70
2.25 2.15
8.15
8.35
8.275 1.50
4.60
0.30 4.85
5.40 8.075
7.95
3.00
0.20
solder lands solder resist occupied area solder paste 5.08
1.20 1.30 1.55
msd057
Fig 18. Reflow soldering footprint for SOT404
BUK761R8-30C_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2007
12 of 15
NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
9. Revision history
Table 7. Revision history Release date 20070820 Data sheet status Product data sheet Change notice Supersedes BUK761R8-30C_1 Document ID BUK761R8-30C_2 Modifications:
* *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Product data sheet -
BUK761R8-30C_1
20060725
BUK761R8-30C_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2007
13 of 15
NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
10. Legal information
10.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
10.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of NXP B.V.
11. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BUK761R8-30C_2
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2007
14 of 15
NXP Semiconductors
BUK761R8-30C
N-channel TrenchMOS standard level FET
12. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 August 2007 Document identifier: BUK761R8-30C_2

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